Exploring AlGaInP for Use in Si Photomultiplier Analogs
We present a materials study of AlGaInP grown on GaAs leveraging deep-level optical spectroscopy and time resolved photoluminescence. Our materials may serve as the basis for wide-bandgap analogs of silicon photomultipliers optimized for short wavelength sensing.
Authors
- John F. Klem (ORCID: https://orcid.org/0000-0002-0598-5780)
- Joseph P. Klesko (ORCID: https://orcid.org/0000-0003-3989-8009)
- Evan M. Anderson (ORCID: https://orcid.org/0000-0002-3771-3085)
- Samuel D. Hawkins (ORCID: https://orcid.org/0000-0002-4705-1628)
- Andrew Armstrong (ORCID: https://orcid.org/0000-0003-0391-6009)
- Aaron J. Muhowski (ORCID: https://orcid.org/0000-0002-5659-6136)
- Eduardo García-Martínez (ORCID: https://orcid.org/0000-0001-8111-0145)
- Lisa N. Caravello
- Eric A. Shaner (ORCID: https://orcid.org/0000-0002-3657-2524)
Institutions
- Sandia National Laboratories (US)
Publication Details
- Published
- 2024-08-14
- DOI
- https://doi.org/10.1109/rapid60772.2024.10646955
- Primary Topic
- Antenna Design and Optimization
- Type
- article
- Field-Weighted Citation Impact
- 0.00