High Gain Low Noise InGaAs Avalanche Photodiode
We report electro-optical characteristics of an InGaAs APD which can achieve a Gain of 100 with over 8 V of operational dynamic range and compare it with a planar design InGaAs APD. They both exhibit low dark current and low Noise Equivalent Power.
Authors
- Arshey Patadia (ORCID: https://orcid.org/0000-0002-1726-0736)
- R. S. Kim
Publication Details
- Published
- 2024-08-14
- DOI
- https://doi.org/10.1109/rapid60772.2024.10646943
- Primary Topic
- Advanced Optical Sensing Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00