Ge-on-Si APD with Diagonal Dual Injection in 45nm SOl SiPh Process
A small form factor high gain Ge-on-Si APD is demonstrated in 45nm silicon photonic technology. The design utilizes dual optical injection to germanium absorption region using a pair of waveguide tapers. For 1550 nm wavelength the device achieves ~14 A/A gain at 3.5V reverse bias
Authors
- R. F. Karlicek (ORCID: https://orcid.org/0000-0003-2688-9760)
- Mona M. Hella (ORCID: https://orcid.org/0009-0009-6591-1693)
- Md Nabil Shehtab Dhrubo (ORCID: https://orcid.org/0000-0002-6212-7571)
Institutions
- Rensselaer Polytechnic Institute (US)
Publication Details
- Published
- 2024-08-14
- DOI
- https://doi.org/10.1109/rapid60772.2024.10646986
- Citations
- 1
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.21