Distinguishing the impact of oxidation on the Josephson junction oxide barrier through the 1/f behavior

The quality of the oxide barrier in Josephson junctions (JJs) is crucial for devices with it as the core structure. Despite the critical nature of the oxidation process in JJ fabrication, there remains a lack of systematic research on its impact. Our study aims to fill this gap by comprehensively investigating the influence of oxidation parameters and methods on the oxide barrier quality. To achieve this, we evaluate the low-frequency 1/f noise of JJs produced using various fabrication processes. Our findings demonstrate that a weak oxidation strength (oxygen pressure × exposure time) and a dynamic oxidation method contribute positively to the formation of high-quality oxide barriers. This research provides an important reference for optimizing the oxidation process.

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Publication Details

Journal
Applied Physics Letters
Published
2024-08-26
DOI
https://doi.org/10.1063/5.0223366
Citations
1
Primary Topic
Quantum and electron transport phenomena
Type
article
Field-Weighted Citation Impact
0.34

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article

Distinguishing the impact of oxidation on the Josephson junction oxide barrier through the 1/f behavior

Hai-Feng Zhang, Liang-Liang Guo, Tian-Le Wang, Hao-Ran Tao et al.
1 citations
Applied Physics Letters
Quantum and electron transport phenomena
0.34
article

Distinguishing the impact of oxidation on the Josephson junction oxide barrier through the 1/f behavior

Hai-Feng Zhang, Liang-Liang Guo, Tian-Le Wang, Hao-Ran Tao, Weicheng Kong, Xin-Xin Yang, Chi Zhang, Guo‐Ping Guo, Yong Chen, Peng Wang, Sheng Zhang, Xiaoyan Yang, Ren-Ze Zhao, Zhi-Long Jia, Peng Duan, Lei Du, Ze-An Zhao
article en
1 citations

Abstract

The quality of the oxide barrier in Josephson junctions (JJs) is crucial for devices with it as the core structure. Despite the critical nature of the oxidation process in JJ fabrication, there remains a lack of systematic research on its impact. Our study aims to fill this gap by comprehensively investigating the influence of oxidation parameters and methods on the oxide barrier quality. To achieve this, we evaluate the low-frequency 1/f noise of JJs produced using various fabrication processes. Our findings demonstrate that a weak oxidation strength (oxygen pressure × exposure time) and a dynamic oxidation method contribute positively to the formation of high-quality oxide barriers. This research provides an important reference for optimizing the oxidation process.

Applied Physics LettersVol. 125(9)
University of Science and Technology of China (CN), CAS Key Laboratory of Urban Pollutant Conversion (CN), Origin Quantum Computing Technology Company (China) (CN)
National Natural Science Foundation of China
Clean water and sanitation
Openalex Percentile: Top 41%
Quantum and electron transport phenomena
0.34
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