The Impact of Gamma Irradiation on 4H-SiC Bipolar Junction Inverters under Various Biasing Conditions

In this study, we introduce the impact of gamma irradiation on 4H-SiC based transistor-transistor logic (TTL) inverters. These monolithic bipolar inverters have been successfully demonstrated in a broad spectrum of temperature and supply voltage conditions. In this iteration of experiments, attempts made to the processing to increase beta values. The gamma radiation tests from a 60 Co source were conducted under various operation conditions and measured in-situ under different biasing conditions. The Silicon Carbide Integrated circuits ( SiC ICs) show excellent tolerance properties to gamma radiation up to doses of nearly 1 MRad. Comparable Si BJT-based TTL inverters show considerable degradation already at one order of magnitude lower doses, clearly demonstrating the superior radiation hardness of 4H-SiC ICs.