Dynamic On-State Resistance and Threshold-Voltage Instability in SiC MOSFETs
Dynamic on-state resistance has been experimentally observed in all commercially-available SiC MOSFETs studied on the time scale of normal device operation, and can be explained by the presence of dynamic threshold-voltage instability. The magnitude of this dynamic on-state resistance varies from vendor to vendor, but in every case this magnitude generally corresponds to the magnitude of that device’s threshold-voltage instability, as described by standard textbook equations-especially in the case of large threshold-voltage instabilities.
Authors
- Daniel B. Habersat (ORCID: https://orcid.org/0000-0003-0201-1443)
- Erik Schroen
- Ronald Green (ORCID: https://orcid.org/0000-0002-3872-7649)
- Damian Urciuoli
- Aivars J. Lelis (ORCID: https://orcid.org/0000-0001-5342-8631)
Institutions
- United States Department of the Army (US)
- DEVCOM Army Research Laboratory (US)
- United States Army Combat Capabilities Development Command (US)
Publication Details
- Journal
- Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
- Published
- 2024-08-26
- DOI
- https://doi.org/10.4028/p-tdxau4
- Citations
- 1
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.21