Total Ionizing Dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton Irradiation
In this paper, the effects of various proton irradiation energies and doses on the electrical characteristics of SiC MOSFETs have been evaluated and characterized using a proton accelerator. The devices under test were designed, fabricated and packaged using 1.2 kV/0.6 µm-tech SiC MOSFET processes. The results demonstrate that the threshold voltage (V th ) of the irradiated devices shifted towards negative values due to the radiation-induced positive oxide trapped charges. Moreover, this negative shift in V th and positive trapped charges of field limiting ring (FLR) oxide led to an increase in output currents and a reduction in the breakdown voltage values.
Authors
- Jae Hwa Seo
- Young Jun Yoon (ORCID: https://orcid.org/0000-0001-8755-5057)
- Young Jo Kim (ORCID: https://orcid.org/0000-0001-8802-8996)
- Hyoung Woo Kim (ORCID: https://orcid.org/0000-0003-1047-5803)
Institutions
- Gyeongguk National University (KR)
- Korea Electrotechnology Research Institute (KR)
Publication Details
- Journal
- Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
- Published
- 2024-08-26
- DOI
- https://doi.org/10.4028/p-rxfx7f
- Citations
- 1
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.21
Funders
- Korea Electrotechnology Research Institute
- Korea Atomic Energy Research Institute
- Ministry of Science and ICT, South Korea