Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements
In this study we analyzed the physical mechanisms governing time-dependent dielectric breakdown (TDDB) and we used TDDB physical model of dielectric breakdown, implemented in the defect-centric Ginestra® modeling platform, to deconvolute the intrinsic material properties effects and geometry feature impact on the gate oxide (GOx) and SiC-device breakdown.
Authors
- Luca Larcher (ORCID: https://orcid.org/0000-0002-9139-349X)
- Holger Schlichting (ORCID: https://orcid.org/0000-0001-6900-0795)
- Thomas Becker (ORCID: https://orcid.org/0000-0002-4117-8249)
- Milan Pešić (ORCID: https://orcid.org/0000-0002-1788-8945)
- Davide Cornigli (ORCID: https://orcid.org/0000-0002-1683-5200)
- Johann Tobias Erlbacher
Institutions
- Friedrich-Alexander-Universität Erlangen-Nürnberg (DE)
- Applied Materials (United States) (US)
- Fraunhofer Institute for Integrated Systems and Device Technology (DE)
- Applied Materials (Germany) (DE)
Publication Details
- Journal
- Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
- Published
- 2024-08-26
- DOI
- https://doi.org/10.4028/p-jbv5vq
- Citations
- 1
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.21