Nonresonant Terahertz Detector Based on Improved N‐Polar AlGaN/GaN Plasma Wave High‐Electron‐Mobility Transistors
The THz photoresponse of four different structures of N‐ and Ga‐polar AlGaN/GaN plasma wave high‐electron‐mobility transistors (HEMTs) has been comparatively investigated. Based on these results, an improved N‐polar plasma wave HEMT detector is proposed: an AlGaN cap layer is introduced in the standard N‐polar HEMT, so as to obtain a lower gate leakage current, thus improving the operating characteristics of plasma wave HEMT. The results show that the responsivity of the improved N‐polar HEMT obtains a significant improvement and as the Al component of AlGaN cap layer increases, the noise equivalent power of the improved N‐polar HEMT has also been optimized.
Authors
- Xiaoyi Lei (ORCID: https://orcid.org/0000-0002-9096-5003)
- Yukun Li (ORCID: https://orcid.org/0009-0007-6384-3696)
- Yang Dai (ORCID: https://orcid.org/0000-0003-3771-7403)
- Pengzhan Wang
- Yiting Zhang (ORCID: https://orcid.org/0009-0008-2483-1921)
- Yunyao Zhang (ORCID: https://orcid.org/0000-0002-2550-5721)
- Han Zhang (ORCID: https://orcid.org/0000-0002-1483-5899)
- Leiyu Gao (ORCID: https://orcid.org/0009-0004-8848-072X)
- R. Z. Yuan (ORCID: https://orcid.org/0009-0007-4193-6314)
- Wu Zhao (ORCID: https://orcid.org/0009-0002-7196-8089)
Institutions
- Northwest University (CN)
- Xi’an University of Posts and Telecommunications (CN)
Publication Details
- Journal
- physica status solidi (b)
- Published
- 2024-08-26
- DOI
- https://doi.org/10.1002/pssb.202400055
- Citations
- 1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.31
Funders
- National Natural Science Foundation of China
- China Postdoctoral Science Foundation