Dynamic switching operation of diamond MOSFETs with NO2 p-type doping and Al2O3 gate insulation and passivation
Diamond metal–oxide–semiconductor field-effect transistor (MOSFET) exhibited durable and stable dynamic switching characteristics at an unprecedentedly high voltage of −105 V. Switching turn-on and turn-off times were measured to be 7.64 and 4.93 ns, respectively, with a corresponding total switching loss of 20.03 pJ for a load resistance of 50 Ω. No Miller effect was observed due to the low Miller capacitance of 11 pF/mm. This study suggests the potentiality of diamond MOSFETs in prospective high-voltage, high-speed applications.
Authors
- Toshiyuki Oishi (ORCID: https://orcid.org/0000-0002-0812-1670)
- Masanori Eguchi (ORCID: https://orcid.org/0009-0008-5728-8400)
- Niloy Chandra Saha (ORCID: https://orcid.org/0000-0002-7344-2243)
- Makoto Kasu (ORCID: https://orcid.org/0000-0002-0881-9454)
- Tomoki Shiratsuchi
Institutions
- Saga University (JP)
- National Institute of Technology, Kure College (JP)
Publication Details
- Journal
- Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
- Published
- 2024-08-26
- DOI
- https://doi.org/10.1116/5.0218780
- Citations
- 2
- Primary Topic
- Diamond and Carbon-based Materials Research
- Type
- article
- Field-Weighted Citation Impact
- 0.23
Funders
- Japan Society for the Promotion of Science