Quantum States Induced by Strong Interface Coupling in a 2D VSe<sub>2</sub>/Bi<sub>2</sub>Se<sub>3</sub> Heterostructure

We have successfully fabricated single-layer (SL) 1T-VSe<sub>2</sub>/Bi<sub>2</sub>Se<sub>3</sub> heterostructures using molecular beam epitaxy (MBE), which exhibits uniform moiré patterns on the heterostructure surface. Scanning tunneling microscopy/spectroscopy (STM/STS) reveals a notable quantum state near the Fermi energy, robust across the entire moiré lattice. This quantum state peak shifts slightly across different domain ranges, suggesting an elastic strain dependence in SL VSe<sub>2</sub>, confirmed by geometric phase analysis (GPA) simulations. Density functional theory (DFT) calculations indicate that the enhanced quantum state results from charge redistribution between the substrate and the epifilm with the orbitals of Se atoms in the deformed VSe<sub>2</sub> playing a dominant role.

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Publication Details

Journal
ACS Nano
Published
2024-08-26
DOI
https://doi.org/10.1021/acsnano.4c03139
Citations
2
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.23

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Quantum States Induced by Strong Interface Coupling in a 2D VSe2/Bi2Se3 Heterostructure

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Quantum States Induced by Strong Interface Coupling in a 2D VSe2/Bi2Se3 Heterostructure

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article en
2 citations

Abstract

We have successfully fabricated single-layer (SL) 1T-VSe<sub>2</sub>/Bi<sub>2</sub>Se<sub>3</sub> heterostructures using molecular beam epitaxy (MBE), which exhibits uniform moiré patterns on the heterostructure surface. Scanning tunneling microscopy/spectroscopy (STM/STS) reveals a notable quantum state near the Fermi energy, robust across the entire moiré lattice. This quantum state peak shifts slightly across different domain ranges, suggesting an elastic strain dependence in SL VSe<sub>2</sub>, confirmed by geometric phase analysis (GPA) simulations. Density functional theory (DFT) calculations indicate that the enhanced quantum state results from charge redistribution between the substrate and the epifilm with the orbitals of Se atoms in the deformed VSe<sub>2</sub> playing a dominant role.

ACS NanoVol. 18(36)
University of Electronic Science and Technology of China (CN), Shenzhen University (CN), Chinese Academy of Sciences (CN), Beijing Normal University (CN), Institute of Semiconductors (CN), Institute of Physics (CN), University of Chinese Academy of Sciences (CN)
Natural Science Foundation of Shenzhen City, National Natural Science Foundation of China, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 52%
2D Materials and Applications
0.23
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Quantum States Induced by Strong Interface Coupling in a 2D VSe<sub>2</sub>/Bi<sub>2</sub>Se<sub>3</sub> Heterostructure — Bin Wang, Ying Liu, et al. · ACS Nano (2024) | TGRS Research Map | TGRS