Repair Engineering of Crystal Structure in van der Waals Materials by Probe Electron Beam

The advancement of electronic technology has led to increasing research on performance and stability. Continuous electrical pulse stimulation can cause crystal structure changes, affecting performance and accelerating aging. Controlled repair of these defects is crucial. In this study, we investigated crystal structure changes in van der Waals (vdW) InSe crystals under continuous electric pulses by using electron beam lithography (EBL) and spherical aberration corrected transmission electron microscopy (Cs-TEM). Results show that electrical pulses induce amorphous regions in the InSe lattice, increasing the device resistance. We used Cs-STEM probe scanning for precise repair, abbreviated SPRT, to optimize device performance. SPRT is related to electric fields induced by the electron beam and can be applied to other 2D materials like α-In<sub>2</sub>Se<sub>3</sub> and CrSe<sub>2</sub>, offering a potential approach to extend device lifespan.

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Publication Details

Journal
Nano Letters
Published
2024-08-26
DOI
https://doi.org/10.1021/acs.nanolett.4c03119
Citations
4
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.47

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article

Repair Engineering of Crystal Structure in van der Waals Materials by Probe Electron Beam

Chuang Ye, Yaxing Zhang, Peng Zhang, Xiaoke Mu et al.
4 citations
Nano Letters
2D Materials and Applications
0.47
article

Repair Engineering of Crystal Structure in van der Waals Materials by Probe Electron Beam

Chuang Ye, Yaxing Zhang, Peng Zhang, Xiaoke Mu, Xue Zeng, Xinrui Zhao, Xixiang Zhang, Laiyuan Wang, Nan Wang, Junwei Zhang, Xia Deng, Wang Hu, Yong Li Peng, Shiyang Wei, Zhe Wang, Tao Wang
article en
4 citations

Abstract

The advancement of electronic technology has led to increasing research on performance and stability. Continuous electrical pulse stimulation can cause crystal structure changes, affecting performance and accelerating aging. Controlled repair of these defects is crucial. In this study, we investigated crystal structure changes in van der Waals (vdW) InSe crystals under continuous electric pulses by using electron beam lithography (EBL) and spherical aberration corrected transmission electron microscopy (Cs-TEM). Results show that electrical pulses induce amorphous regions in the InSe lattice, increasing the device resistance. We used Cs-STEM probe scanning for precise repair, abbreviated SPRT, to optimize device performance. SPRT is related to electric fields induced by the electron beam and can be applied to other 2D materials like α-In<sub>2</sub>Se<sub>3</sub> and CrSe<sub>2</sub>, offering a potential approach to extend device lifespan.

Nano LettersVol. 24(35)
Shandong University (CN), Sun Yat-sen University (CN), Lanzhou Jiaotong University (CN), King Abdullah University of Science and Technology (SA), Lanzhou University (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China
Openalex Percentile: Top 39%
2D Materials and Applications
0.47
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