Molecular Electronic Junctions Achieved High Thermal Switch Ratios in Atomistic Simulations

The development of devices that improve thermal energy management requires thermal regulation with efficiency comparable to the ratios <i>R</i> ∼ 10<sup>5</sup> in electric regulation. Unfortunately, current materials and devices in thermal regulators have only been reported to achieve <i>R</i> ∼ 10. We use atomistic simulations to demonstrate that Ferrocenyl (Fc) molecules under applied external electric fields can alter charge states and achieve high thermal switch ratios <i>R</i> = <i>G</i><sub><i>q</i></sub>/<i>G</i><sub>0</sub>, where <i>G</i><sub><i>q</i></sub> and <i>G</i><sub>0</sub> are the high and low limiting conductances. When an electric field is applied, Fc molecules are positively charged, and the SAM-Au interfacial interaction is strong, leading to high heat conductance <i>G</i><sub><i>q</i></sub>. On the other hand, with no electric field, the Fc molecules are charge neutral and the SAM-Au interfacial interaction is weak, leading to low heat conductance <i>G</i><sub>0</sub>. We optimized various design parameters for the device performance, including the Au-to-Au gap distance <i>L</i>, the system operation temperature <i>T</i>, the net charge on Fc molecules <i>q</i>, the Au surface charge number <i>Z</i>, and the SAM number <i>N</i>. We find that <i>G</i><sub><i>q</i></sub> can be very large and increases with increasing <i>q</i>, <i>Z</i>, or <i>N</i>, while <i>G</i><sub>0</sub> is near 0 at <i>L</i> > 3.0 nm. As a result, <i>R</i> > 100 was achieved for selected parameter ranges reported here.

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Publication Details

Journal
ACS Applied Materials & Interfaces
Published
2024-08-26
DOI
https://doi.org/10.1021/acsami.4c09904
Citations
1
Primary Topic
Thermal properties of materials
Type
article
Field-Weighted Citation Impact
0.12

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article

Molecular Electronic Junctions Achieved High Thermal Switch Ratios in Atomistic Simulations

Rigoberto Hernandez, Xingfei Wei
1 citations
ACS Applied Materials & Interfaces
Thermal properties of materials
0.12
article

Molecular Electronic Junctions Achieved High Thermal Switch Ratios in Atomistic Simulations

Rigoberto Hernandez, Xingfei Wei
article en
1 citations

Abstract

The development of devices that improve thermal energy management requires thermal regulation with efficiency comparable to the ratios <i>R</i> ∼ 10<sup>5</sup> in electric regulation. Unfortunately, current materials and devices in thermal regulators have only been reported to achieve <i>R</i> ∼ 10. We use atomistic simulations to demonstrate that Ferrocenyl (Fc) molecules under applied external electric fields can alter charge states and achieve high thermal switch ratios <i>R</i> = <i>G</i><sub><i>q</i></sub>/<i>G</i><sub>0</sub>, where <i>G</i><sub><i>q</i></sub> and <i>G</i><sub>0</sub> are the high and low limiting conductances. When an electric field is applied, Fc molecules are positively charged, and the SAM-Au interfacial interaction is strong, leading to high heat conductance <i>G</i><sub><i>q</i></sub>. On the other hand, with no electric field, the Fc molecules are charge neutral and the SAM-Au interfacial interaction is weak, leading to low heat conductance <i>G</i><sub>0</sub>. We optimized various design parameters for the device performance, including the Au-to-Au gap distance <i>L</i>, the system operation temperature <i>T</i>, the net charge on Fc molecules <i>q</i>, the Au surface charge number <i>Z</i>, and the SAM number <i>N</i>. We find that <i>G</i><sub><i>q</i></sub> can be very large and increases with increasing <i>q</i>, <i>Z</i>, or <i>N</i>, while <i>G</i><sub>0</sub> is near 0 at <i>L</i> > 3.0 nm. As a result, <i>R</i> > 100 was achieved for selected parameter ranges reported here.

ACS Applied Materials & InterfacesVol. 16(36)
Johns Hopkins University (US)
Division of Chemistry, Division of Advanced Cyberinfrastructure
Affordable and clean energy
Openalex Percentile: Top 60%
Thermal properties of materials
0.12
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Molecular Electronic Junctions Achieved High Thermal Switch Ratios in Atomistic Simulations — Rigoberto Hernandez, Xingfei Wei · ACS Applied Materials & Interfaces (2024) | TGRS Research Map | TGRS