A <i>β</i>-Compensated NPN-Based Temperature Sensor With ±0.1 °C (3σ) Inaccuracy From -55 °C to 125 °C and 200fJ · K² Resolution FoM
This article presents a CMOS temperature sensor that achieves both state-of-the-art energy efficiency and accuracy. An NPN-based front end uses two resistors to efficiently generate a PTAT and CTAT current, whose ratio is then digitized by a continuous-time (CT) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Delta \Sigma $ </tex-math></inline-formula>-modulator. A <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-compensation technique is used to mitigate base current errors associated with the NPN’s finite <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>. Component mismatch and 1/f noise are mitigated by applying chopping and dynamic element matching (DEM), while the spread in <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{\text {BE}}$ </tex-math></inline-formula> and the ratio of the two resistors are digitally trimmed at room temperature (RT). Fabricated in a 0.18-<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m CMOS process, the sensor draws <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2.5~\mu $ </tex-math></inline-formula>A from a supply voltage ranging from 1.4 to 2.2 V. Measurements on 40 samples show that it achieves an inaccuracy of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\pm 0.1~^{\circ }$ </tex-math></inline-formula>C (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$3\sigma $ </tex-math></inline-formula>) from <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$- 55~^{\circ }$ </tex-math></inline-formula>C to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$125~^{\circ }$ </tex-math></inline-formula>C. Furthermore, it is both highly energy efficient, with a resolution figure of merit (FoM) of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$200\text {fJ}\cdot \text {K}^{2}$ </tex-math></inline-formula>, as well as very compact, occupying only 0.07 mm2.
Authors
- Kofi A. A. Makinwa (ORCID: https://orcid.org/0000-0002-2992-5467)
- Nandor G. Toth (ORCID: https://orcid.org/0009-0009-7546-3257)
Institutions
- Delft University of Technology (NL)
Publication Details
- Journal
- IEEE Journal of Solid-State Circuits
- Published
- 2024-08-26
- DOI
- https://doi.org/10.1109/jssc.2024.3440071
- Citations
- 1
- Primary Topic
- Advanced MEMS and NEMS Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.21