Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping

This article presents a comprehensive analytical framework for modeling p-GaN gate high-electronmobility transistors (HEMTs) based on rigorous solution of the Poisson and Schrödinger equations. It focuses primarily on the calculation of the 2-D electron gas (2DEG), voltage variation across the junction (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Delta V_j$ </tex-math></inline-formula>), and AIGaN barrier (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Delta V_b$ </tex-math></inline-formula>) for the entire range of forward gate bias until gate breakdown. Our model considers the impact of AIGaN barrier height saturation. In addition, we demonstrate our model with the engineered p-GaN doping profile that yields higher forward gate breakdown voltages. Gate capacitance and breakdown voltage have been modeled for both uniform and engineered p-GaN doping profiles. The viability and accuracy of the proposed model are demonstrated through comparisons with empirical measurement data and TCAD simulations.