Temperature-dependent dielectric behavior of <i>A</i>6<i>B</i>2O17 (<i>A</i> = Zr, Hf; <i>B</i> = Nb, Ta) phases

We report on temperature-dependent dielectric behavior of disordered ternary A6B2O17 (A = Zr, Hf; B = Nb, Ta)-form oxides in the GHz frequency range. The microwave dielectric properties including relative permittivity, dielectric loss, and temperature-dependent relative permittivity were characterized using cylindrical dielectric resonators using a resonant post measurement technique. Dielectric measurements through the resonant post method approach generally agree with dielectric measurements of A6B2O17 bulk ceramics measured through standard resonant post techniques. Coefficients describing the temperature-dependent relative permittivity for ternary A6B2O17 phases are strongly positive, suggesting contributions to polarizability arising from long-range mechanisms potentially associated with structural disorder. These observations support the working hypothesis that material functionality can be engineered by the chemical diversity and structural disorder possible in high configurational entropy A6B2O17 phases.