Visualization of P<sup>+</sup> JTE Embedded Rings Used for Peripheral Protection of High Voltage Schottky Diodes by the Optical Beam Induced Current (OBIC) Technique

This paper presents micro-OBIC measurements performed at different biasing on two power devices protected by a combination of P + rings embedded in a JTE Zone. Thanks to the micro-OBIC micrometer spatial resolution, small gaps can be visible on OBIC profiles. Thus, the spatial variation of the micro-OBIC signal accurately reflects the topology of the periphery protection: combination of JTE and rings and channel stopper. These measurements agree with the electric field distribution (calculated by finite element method) along the structure.

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Publication Details

Journal
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
Published
2024-08-23
DOI
https://doi.org/10.4028/p-d65yun
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
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article

Visualization of P+ JTE Embedded Rings Used for Peripheral Protection of High Voltage Schottky Diodes by the Optical Beam Induced Current (OBIC) Technique

Luong Viêt Phung, Dominique Planson, Philippe Godignon, Camille Sonneville et al.
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
Silicon Carbide Semiconductor Technologies
article

Visualization of P+ JTE Embedded Rings Used for Peripheral Protection of High Voltage Schottky Diodes by the Optical Beam Induced Current (OBIC) Technique

Luong Viêt Phung, Dominique Planson, Philippe Godignon, Camille Sonneville, Pascal Bevilacqua, Dominique Tournier, Pierre Brosselard, Gabrielle Moulin
article en

Abstract

This paper presents micro-OBIC measurements performed at different biasing on two power devices protected by a combination of P + rings embedded in a JTE Zone. Thanks to the micro-OBIC micrometer spatial resolution, small gaps can be visible on OBIC profiles. Thus, the spatial variation of the micro-OBIC signal accurately reflects the topology of the periphery protection: combination of JTE and rings and channel stopper. These measurements agree with the electric field distribution (calculated by finite element method) along the structure.

Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomenaVol. 360
Université Claude Bernard Lyon 1 (FR), Institut des langues et cultures d'Europe, Amérique, Afrique, Asie et Australie (FR), Université Grenoble Alpes (FR)
Affordable and clean energy
Openalex Percentile: Top 89%
Silicon Carbide Semiconductor Technologies
DOIOpen Access PDFOpenAlex
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Visualization of P<sup>+</sup> JTE Embedded Rings Used for Peripheral Protection of High Voltage Schottky Diodes by the Optical Beam Induced Current (OBIC) Technique — Luong Viêt Phung, Dominique Planson, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena (2024) | TGRS Research Map | TGRS