A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism

In this paper, a simple compact model for the static behavior of SiC MPS diodes is developed in the form of a SPICE-compatible subcircuit. The model is suited to describe the undesired snapback mechanism likely to occur in unoptimized high-voltage MPS structures with narrow width of the PiN portion and/or very thick drift layer; in particular, the model accounts for the snapback mechanism both as the cell extension varies and as individual portions of Schottky and PiN vary. Sentaurus TCAD simulations of a 10-kV MPS diode are used as a reference for the calibration of the model parameters and accuracy verification.