3<sup>rd</sup> Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Class
The aim of this work is to investigate the 3 rd quadrant safe operating area (SOA) of different voltage class SiC MOSFETs under surge current conditions depending on the gate-source voltage. The extent to which an applied gate-source voltage can influence the surge current capability was investigated. For 650 V and 1.2 kV voltage class devices, surge current capability was higher with channel-on mode. However, this behavior was vice-versa for 2 kV and 3.3 kV devices. In this investigation, during the surge current event, the gate-source voltage was switched between different values to optimize the resulting voltage drop. This method can reduce power dissipation during a surge current event, especially for high voltage class SiC MOSFETs.
Authors
- Clemens Herrmann
- Thomas Basler (ORCID: https://orcid.org/0000-0003-1489-6461)
- Guang Zeng (ORCID: https://orcid.org/0000-0001-8275-7848)
- Rudolf Elpelt
- Mohamed Alaluss (ORCID: https://orcid.org/0009-0000-0771-1612)
- Christoph Böhm (ORCID: https://orcid.org/0000-0002-4526-4515)
Institutions
- Infineon Technologies (Germany) (DE)
- Chemnitz University of Technology (DE)
- Infineon Technologies (Canada) (CA)
Publication Details
- Journal
- Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
- Published
- 2024-08-23
- DOI
- https://doi.org/10.4028/p-fowa4y
- Citations
- 3
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.63