SiC GAA MOSFET Concept for High Power Electronics Performance Evaluation through Advanced TCAD Simulations
In this work a groundbreaking SiC power MOSFET based on innovative vertical Gate All Around (GAA) concept is presented. Extensive TCAD simulations are performed to analyze the performance in forward as well as in reverse conditions for this new device concept. The proposed design has a target rating voltage of 1200V, suitable for e-mobility applications.
Authors
- Luca Maresca (ORCID: https://orcid.org/0000-0003-4660-5163)
- Alessandro Borghese (ORCID: https://orcid.org/0000-0002-6285-4242)
- Lars Knoll (ORCID: https://orcid.org/0000-0003-1705-899X)
- Michele Riccio (ORCID: https://orcid.org/0000-0002-5926-4911)
- Stephan Wirths (ORCID: https://orcid.org/0000-0002-3462-7640)
- Andrea Irace (ORCID: https://orcid.org/0000-0003-1400-8380)
- V. Terracciano
- G. Romano (ORCID: https://orcid.org/0000-0002-6064-4348)
- Marco Boccarossa (ORCID: https://orcid.org/0000-0002-6912-5413)
- Giovanni Breglio (ORCID: https://orcid.org/0000-0002-9350-5483)
- Andrei Mihăilă
Institutions
- RHI Magnesita (Switzerland) (CH)
- Federico II University Hospital (IT)
- Hitachi (Japan) (JP)
Publication Details
- Journal
- Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
- Published
- 2024-08-23
- DOI
- https://doi.org/10.4028/p-lhri4m
- Citations
- 3
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.63