Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs through Infrared Thermography
This paper provides an experimental investigation through infrared thermography of the steady-state temperature imbalance arising in parallel SiC MOSFETs. A switched-mode boost power converter based on two arrays of 4 parallel 1.2 kV MOSFETs is selected as a case-study. The analysis aims at proving that a proper device arrangement can minimize the thermal imbalance in the absence of circuit layout optimization.
Authors
- Luca Maresca (ORCID: https://orcid.org/0000-0003-4660-5163)
- Alessandro Borghese (ORCID: https://orcid.org/0000-0002-6285-4242)
- Michele Riccio (ORCID: https://orcid.org/0000-0002-5926-4911)
- Andrea Irace (ORCID: https://orcid.org/0000-0003-1400-8380)
- Marco Boccarossa (ORCID: https://orcid.org/0000-0002-6912-5413)
- Vincenzo Romano Marrazzo (ORCID: https://orcid.org/0000-0003-3949-2746)
- Giovanni Breglio (ORCID: https://orcid.org/0000-0002-9350-5483)
- Stefano Angora
Institutions
- University of Naples Federico II (IT)
Publication Details
- Journal
- Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
- Published
- 2024-08-23
- DOI
- https://doi.org/10.4028/p-2uwgqf
- Citations
- 1
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.21