Robust Giant Tunnel Electroresistance and Negative Differential Resistance in 2D Semiconductor/α‐In<sub>2</sub>Se<sub>3</sub> Ferroelectric Tunnel Junctions (Adv. Funct. Mater. 34/2024)
Ferroelectric Tunnel Junctions In article number 2407253, Qijie Liang, Changjian Zhou, and co-workers demonstrate that the integration of 2D semiconducting electrodes and ferroelectrics leads to temperature-independent ferroelectric tunnel junctions with giant tunnel electroresistance, negative differential resistance, enhanced robustness, and gate programmability. These findings offer critical insights into attaining superior performance by implementing diverse electrodes, showing substantial potential in memristive and in-memory computing applications.
Authors
- Yang Chai (ORCID: https://orcid.org/0000-0002-8943-0861)
- Jianxian Yi (ORCID: https://orcid.org/0009-0000-0916-1693)
- Ruolan Wen
- Xiankai Lin (ORCID: https://orcid.org/0009-0004-7010-3360)
- Qijie Liang (ORCID: https://orcid.org/0000-0003-4252-7997)
- Changjian Zhou (ORCID: https://orcid.org/0000-0002-7156-348X)
- Wenbo Li (ORCID: https://orcid.org/0000-0003-0741-9210)
- Jiwei Chen (ORCID: https://orcid.org/0000-0002-3702-5645)
- Yingjie Luo
- Aumber Abbas (ORCID: https://orcid.org/0000-0002-8663-7824)
- Yueyi Sun
- Yihong Sun
- Guitian Qiu
Institutions
- Hong Kong Polytechnic University (HK)
- Songshan Lake Materials Laboratory (CN)
- South China University of Technology (CN)
Publication Details
- Journal
- Advanced Functional Materials
- Published
- 2024-08-01
- DOI
- https://doi.org/10.1002/adfm.202470195
- Citations
- 2
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.42