Evolution of Graphene Dirac Fermions in Electric Double‐Layer Transistors with a Soft Barrier (Adv. Funct. Mater. 34/2024)
Electric Double-Layer Transistors In article number 2400553, Wanlin Guo, Yanpeng Liu, and co-workers develop a spontaneously formed electric double-layer transistor that allows a precise control over graphene Fermi energy and charge evolution. This innovative design extends further to high mobility 2D charge gases and other narrow-gap 2D semiconductors, enriching field tunability and associated physical properties, promising advancements in nanoelectronics.
Authors
- Xin Liu (ORCID: https://orcid.org/0000-0003-3622-0446)
- Huan Lü (ORCID: https://orcid.org/0000-0003-4712-9402)
- Yanpeng Liu (ORCID: https://orcid.org/0000-0002-5265-2735)
- Fanrong Lin (ORCID: https://orcid.org/0000-0002-7091-8322)
- Wanlin Guo (ORCID: https://orcid.org/0000-0002-2302-8044)
- Pin Lyu (ORCID: https://orcid.org/0000-0003-1881-3766)
- Zhuhua Zhang (ORCID: https://orcid.org/0000-0001-6406-0959)
- Jens Martin (ORCID: https://orcid.org/0000-0001-9548-2839)
- Jiawei Liu (ORCID: https://orcid.org/0000-0003-2071-7546)
- Zhili Hu (ORCID: https://orcid.org/0000-0001-8637-9952)
- Ying Liu (ORCID: https://orcid.org/0000-0002-7164-962X)
Institutions
- National University of Singapore (SG)
- Leibniz Institute for Crystal Growth (DE)
- Nanjing University of Aeronautics and Astronautics (CN)
Publication Details
- Journal
- Advanced Functional Materials
- Published
- 2024-08-01
- DOI
- https://doi.org/10.1002/adfm.202470192
- Citations
- 3
- Primary Topic
- Graphene research and applications
- Type
- article
- Field-Weighted Citation Impact
- 0.35