1.2 kV SiC MOSFET with Low Specific ON-Resistance and High Immunity to Parasitic Turn-On

With the capability to switch at high speed, there are important concerns about Parasitic Turn-On (PTO) when using SiC MOSFETs in switching applications with fundamental half-bridge configuration [1]. In this work, we present 1200V SiC planar MOSFETs with low specific ON-resistance (Rsp), fast switching characteristics and high immunity to PTO. The PTO immunity is verified by experimental comparison to several commercially available SiC MOSFETs.

Authors

Publication Details

Journal
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
Published
2024-08-23
DOI
https://doi.org/10.4028/p-f0fpmb
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
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article

1.2 kV SiC MOSFET with Low Specific ON-Resistance and High Immunity to Parasitic Turn-On

Martin Domeij, Thanh Toan Pham, Kyeong Seok Park, Doo Jin Choi et al.
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
Silicon Carbide Semiconductor Technologies
article

1.2 kV SiC MOSFET with Low Specific ON-Resistance and High Immunity to Parasitic Turn-On

Martin Domeij, Thanh Toan Pham, Kyeong Seok Park, Doo Jin Choi, Jimmy Franchi, Soo Hyun Kang
article en

Abstract

With the capability to switch at high speed, there are important concerns about Parasitic Turn-On (PTO) when using SiC MOSFETs in switching applications with fundamental half-bridge configuration [1]. In this work, we present 1200V SiC planar MOSFETs with low specific ON-resistance (Rsp), fast switching characteristics and high immunity to PTO. The PTO immunity is verified by experimental comparison to several commercially available SiC MOSFETs.

Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomenaVol. 360
Openalex Percentile: Top 89%
Silicon Carbide Semiconductor Technologies
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