Calculation of Electronic Structure Properties Of Two-Dimensional AlN/SiC Heterojunction Under Biaxial Stress

Under the action of in-plane biaxial stress, the electronic structure properties of the two-dimensional AlN/SiC heterostructure were studied by first principles. The two-dimensional AlN/SiC heterostructure has an indirect band gap in its original state, and the band gap can be adjusted under -10%~10% biaxial strain, without the transition to direct band gap and metal. The application of in-plane biaxial stress can effectively adjust the electronic characteristics. Based on the calculation of the energy band, the influence of the external biaxial tensile strain on the effective carrier mass is discussed. The results show that the band gap of the two-dimensional semiconductor material can be adjusted by the in-plane biaxial strain. It has the expected application value.