Investigation of the Short-Circuit Withstand Time and On-Resistance Trade-Off of 1.2 kV 4H-SiC Power MOSFETs
The short-circuit withstand time and on-resistance trade-off is investigated in 4H-SiC Power MOSFETs. We compare the static and short circuit withstand time results along with JFET width dependency and PWELL doping variation of MOSFET. We present that smaller Rds,on by wider JFET width and lighter doped PWELL results in worse short circuit withstand time.
Authors
- Shadi Sabri
- Jeff Kim (ORCID: https://orcid.org/0000-0002-7246-8935)
- Sei‐Hyung Ryu (ORCID: https://orcid.org/0000-0002-3607-1199)
- Brett Hull (ORCID: https://orcid.org/0000-0003-0512-7476)
- Brian Fetzer
Institutions
- Fraunhofer Project Centre Wolfsburg (DE)
Publication Details
- Journal
- Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
- Published
- 2024-08-23
- DOI
- https://doi.org/10.4028/p-4eg9rl
- Citations
- 1
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.21