Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs

We demonstrated that the surge current capability of 3.3 kV Schottky-barrier-diode-embedded (SBD-embedded) SiC MOSFETs is equivalent to that of conventional SiC MOSFETs and three times higher than that of SiC SBDs. Furthermore, we revealed that the bipolar degradation attributed to the repetitive surge stress of high current density was negligible, which can be explained by the small total area of the expanded stacking faults (SFs) caused by the limited total period of conduction of the body diodes.

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Publication Details

Journal
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
Published
2024-08-23
DOI
https://doi.org/10.4028/p-p4eywp
Citations
1
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
0.21
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article

Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs

Katsutoshi Sugawara, Y. Oritsuki, Katsuhiro Fujiyoshi, Akifumi Iijima et al.
1 citations
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
Silicon Carbide Semiconductor Technologies
0.21
article

Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs

Katsutoshi Sugawara, Y. Oritsuki, Katsuhiro Fujiyoshi, Akifumi Iijima, Tomoyuki Takahashi, Takeshi Murakami, Shiro Hino, Yasuhiro Kagawa, Yoichi Hironaka, Kazuyasu Nishikawa, Koutarou Kawahara
article en
1 citations

Abstract

We demonstrated that the surge current capability of 3.3 kV Schottky-barrier-diode-embedded (SBD-embedded) SiC MOSFETs is equivalent to that of conventional SiC MOSFETs and three times higher than that of SiC SBDs. Furthermore, we revealed that the bipolar degradation attributed to the repetitive surge stress of high current density was negligible, which can be explained by the small total area of the expanded stacking faults (SFs) caused by the limited total period of conduction of the body diodes.

Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomenaVol. 360
Mitsubishi Electric (Japan) (JP), Mitsubishi Electric (United States) (US)
Openalex Percentile: Top 49%
Silicon Carbide Semiconductor Technologies
0.21
DOIOpen Access PDFOpenAlex
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Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs — Katsutoshi Sugawara, Y. Oritsuki, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena (2024) | TGRS Research Map | TGRS