A Triple-Band, High DC-to-RF Efficiency, Multicore VCO With a Dual-Path Inductor and Mode-Switching Capacitor

This article introduces an innovative four-port dual-path inductor designed to deliver two distinct inductance values to the resonator of a voltage-controlled oscillator (VCO). The switching between the inductor’s two excitation modes, even and odd, is determined by the differential excitation’s input polarity, eliminating the need for a series switch. Thus, the inductor has a high-quality factor (Q) in both modes. The inductances in these modes can be independently set based on desired frequencies. This inductance change achieves coarse frequency tuning, while fine-tuning is realized by a conventional 2-bit capacitor bank with a small-size varactor. This inductor is well suited for designing multiband VCOs aimed at widely spaced operation frequency bands. Apart from the inductance change, a particular case of mode-switching capacitor is employed to extend to another frequency band in between the low and middle bands, achieving triple-band oscillation. As a result, this article presents two VCOs designed using the proposed inductor: one in class-D biasing in a 65-nm CMOS process and another with class-B biasing in a 180-nm BiCMOS process. Both VCOs successfully oscillate across three distinct frequency bands, centered at 19, 28, and 36 GHz, while maintaining outstanding phase noise and minimal power consumption. Measurement results show good match with simulation, resulting in a peak figure of merit (FoM) of 185.7 dBc/Hz at 18.5 GHz, and occupy 0.088-<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text {mm}^{2}$ </tex-math></inline-formula> (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$250\times 350~\mu $ </tex-math></inline-formula> m) area in both processes.

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Publication Details

Journal
IEEE Transactions on Microwave Theory and Techniques
Published
2024-08-23
DOI
https://doi.org/10.1109/tmtt.2024.3439653
Citations
2
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
Field-Weighted Citation Impact
0.42

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article

A Triple-Band, High DC-to-RF Efficiency, Multicore VCO With a Dual-Path Inductor and Mode-Switching Capacitor

Md Aminul Hoque, Deukhyoun Heo
2 citations
IEEE Transactions on Microwave Theory and Techniques
Radio Frequency Integrated Circuit Design
0.42
article

A Triple-Band, High DC-to-RF Efficiency, Multicore VCO With a Dual-Path Inductor and Mode-Switching Capacitor

Md Aminul Hoque, Deukhyoun Heo
article en
2 citations

Abstract

This article introduces an innovative four-port dual-path inductor designed to deliver two distinct inductance values to the resonator of a voltage-controlled oscillator (VCO). The switching between the inductor’s two excitation modes, even and odd, is determined by the differential excitation’s input polarity, eliminating the need for a series switch. Thus, the inductor has a high-quality factor (Q) in both modes. The inductances in these modes can be independently set based on desired frequencies. This inductance change achieves coarse frequency tuning, while fine-tuning is realized by a conventional 2-bit capacitor bank with a small-size varactor. This inductor is well suited for designing multiband VCOs aimed at widely spaced operation frequency bands. Apart from the inductance change, a particular case of mode-switching capacitor is employed to extend to another frequency band in between the low and middle bands, achieving triple-band oscillation. As a result, this article presents two VCOs designed using the proposed inductor: one in class-D biasing in a 65-nm CMOS process and another with class-B biasing in a 180-nm BiCMOS process. Both VCOs successfully oscillate across three distinct frequency bands, centered at 19, 28, and 36 GHz, while maintaining outstanding phase noise and minimal power consumption. Measurement results show good match with simulation, resulting in a peak figure of merit (FoM) of 185.7 dBc/Hz at 18.5 GHz, and occupy 0.088-<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text {mm}^{2}$ </tex-math></inline-formula> (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$250\times 350~\mu $ </tex-math></inline-formula> m) area in both processes.

IEEE Transactions on Microwave Theory and TechniquesVol. 73(2)
Washington State University (US)
National Science Foundation
Affordable and clean energy
Openalex Percentile: Top 39%
Radio Frequency Integrated Circuit Design
0.42
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A Triple-Band, High DC-to-RF Efficiency, Multicore VCO With a Dual-Path Inductor and Mode-Switching Capacitor — Md Aminul Hoque, Deukhyoun Heo · IEEE Transactions on Microwave Theory and Techniques (2024) | TGRS Research Map | TGRS