Directly Coupled Hydrogenated Diamond FET Logic Circuit With High Voltage Gain

The directly coupled hydrogen-terminated diamond FET logic (DCHDFL) circuit is fabricated. The E-mode and D-mode FETs are assigned as driver and load devices of the DCHDFL circuit to achieve inversion characteristics. The E-mode FET showcases high I<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DSmax</sub> of 53.3mA/mm, V<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> of -0.8 V, low SS of 98 mV/dec and on/off ratio of 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup>, which enable input/output logic level matching with a low drive/load ratio of 1.0. The peak gain of circuit increases from 12.57 to 36.3 V/V with V<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DD</sub> ranging from -5 V to -25 V, which is the highest gain achieved of diamond inverters, due to the high on/off ratio and low SS of E-mode FET. This circuit exhibits proper functions up to 200 °C, demonstrating a good thermal stability. These results indicate the great potential and possibilities for diamond smart power integrated circuit application.