Growth of Hg0.7Cd0.3Te on Van Der Waals Mica Substrates via Molecular Beam Epitaxy

In this paper, we present a study on the direct growth of Hg0.7Cd0.3Te thin films on layered transparent van der Waals mica (001) substrates through weak interface interaction through molecular beam epitaxy. The preferred orientation for growing Hg0.7Cd0.3Te on mica (001) substrates is found to be the (111) orientation due to a better lattice match between the Hg0.7Cd0.3Te layer and the underlying mica substrate. The influence of growth parameters (mainly temperature and Hg flux) on the material quality of epitaxial Hg0.7Cd0.3Te thin films is studied, and the optimal growth temperature and Hg flux are found to be approximately 190 °C and 4.5 × 10-4 Torr as evidenced by higher crystalline quality and better surface morphology. Hg0.7Cd0.3Te thin films (3.5 µm thick) grown under these optimal growth conditions present a full width at half maximum of 345.6 arc sec for the X-ray diffraction rocking curve and a root-mean-square surface roughness of 6 nm. However, a significant number of microtwin defects are observed using cross-sectional transmission electron microscopy, which leads to a relatively high etch pit density (mid-107 cm-2) in the Hg0.7Cd0.3Te thin films. These findings not only facilitate the growth of HgCdTe on mica substrates for fabricating curved IR sensors but also contribute to a better understanding of growth of traditional zinc-blende semiconductors on layered substrates.