Nanostructured Molecular–Network Arsenoselenides from the Border of a Glass-Forming Region: A Disproportionality Analysis Using Complementary Characterization Probes

Binary As_xSe_100-x alloys from the border of a glass-forming region (65 < <i>x</i> < 70) subjected to nanomilling in dry and dry-wet modes are characterized by the XRPD, micro-Raman scattering (micro-RS) and revised positron annihilation lifetime (PAL) methods complemented by a disproportionality analysis using the quantum-chemical cluster modeling approach. These alloys are examined with respect to tetra-arsenic biselenide As₄Se₂ stoichiometry, realized in glassy g-As₆₅Se₃₅, glassy-crystalline g/c-As₆₇Se₃₃ and glassy-crystalline g/c-As₇₀Se₃₀. From the XRPD results, the number of rhombohedral As and cubic arsenolite As₂O₃ phases in As-Se alloys increases after nanomilling, especially in the wet mode realized in a PVP water solution. Nanomilling-driven amorphization and reamorphization transformations in these alloys are identified by an analysis of diffuse peak halos in their XRPD patterning, showing the interplay between the levels of a medium-range structure (disruption of the intermediate-range ordering at the cost of an extended-range one). From the micro-RS spectroscopy results, these alloys are stabilized by molecular thioarsenides As₄Se_n (<i>n</i> = 3, 4), regardless of their phase composition, remnants of thioarsenide molecules destructed under nanomilling being reincorporated into a glass network undergoing a polyamorphic transition. From the PAL spectroscopy results, volumetric changes in the wet-milled alloys with respect to the dry-milled ones are identified as resulting from a direct conversion of the bound positron-electron (Ps, positronium) states in the positron traps. Ps-hosting holes in the PVP medium appear instead of positron traps, with ~0.36-0.38 ns lifetimes ascribed to multivacancies in the As-Se matrix. The superposition of PAL spectrum peaks and tails for pelletized PVP, unmilled, dry-milled, and dry-wet-milled As-Se samples shows a spectacular smoothly decaying trend. The microstructure scenarios of the spontaneous (under quenching) and activated (under nanomilling) decomposition of principal network clusters in As₄Se₂-bearing arsenoselenides are recognized. Over-constrained As_6·(2/3) ring-like network clusters acting as pre-cursors of the rhombohedral As phase are the main products of this decomposition. Two spontaneous processes for creating thioarsenides with crystalline counterparts explain the location of the glass-forming border in an As-Se system near the As₄Se₂ composition, while an activated decomposition process for creating layered As₂Se₃ structures is responsible for the nanomilling-driven molecular-to-network transition.