Silicon photomultipliers for future HEP experiments

For the particle identification systems of the future high-energy physics detectors, single-photon sensors with sub-mm granularity, high sensitivity, and mitigation strategy for operation in the neutron-irradiated areas are needed. Silicon photomultipliers are considered a baseline technology because of their high photon detection efficiency, good timing resolution, and low operating voltage compared to those of vacuum-based photo sensors. After neutron irradiation, the dark counts increase dramatically and distort the signal baseline, making the single photons indistinguishable. Although the DCR of different unirradiated SiPMs varies, the devices show very similar rates when irradiated to high doses. In this work, we investigated the performance parameters of FBK NUV-HD-RH UHD-DE 1 mm 2 devices and determined the working temperature. We show that the maximum operation temperature for samples irradiated with a fluence of 1 0 12 neq/cm 2 is around -100 ° C .