Remarkably improved photo-charging and dark-discharging current in a faradaic junction solar rechargeable device by regulating the morphology of a semiconductor
Abstract Two-electrode solar rechargeable devices can converse and store solar energy without external bias. However, the photo-charging and dark-discharging current of these devices is low and limits their practical applications. Here, the photo-charging and dark-discharging current of Si/poly(N-methylpyrrole) (PNMPy) photoanode increases 21 and 10 times by preparing nanostructured Si semiconductor, up to 5.09 and 2.06 mA cm −2 , respectively. Further studies suggest that the improved current comes from higher separation efficiency of photo-generated carriers and new electron transfer paths on the surface of nanostructured Si. Moreover, a solar rechargeable device of Si/PNMPy/H 2 SO 4 (aq)/WO 3 /FTO was prepared, which indicated good cyclic stability. These results deepen our understanding on the current in solar rechargeable devices and offer guidance for the design of other high-performance devices.
Authors
- Ziyi Wan
- Zhigang Zou (ORCID: https://orcid.org/0000-0003-2092-8335)
- Xiao Wei Sun (ORCID: https://orcid.org/0000-0002-2840-1880)
- Ye Fu (ORCID: https://orcid.org/0000-0001-8100-6815)
- Dongjian Jiang
- Wenjun Luo (ORCID: https://orcid.org/0000-0001-6760-6929)
- Yuzhan Zheng
- Cuixia Cui
- Bo Wang (ORCID: https://orcid.org/0000-0002-3784-8684)
- Changping Yao
Institutions
- Collaborative Innovation Center of Advanced Microstructures (CN)
- Nanjing University (CN)
Publication Details
- Journal
- Journal of Physics D Applied Physics
- Published
- 2024-08-22
- DOI
- https://doi.org/10.1088/1361-6463/ad714f
- Citations
- 1
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.21
Funders
- National Natural Science Foundation of China
- China Postdoctoral Science Foundation