Remarkably improved photo-charging and dark-discharging current in a faradaic junction solar rechargeable device by regulating the morphology of a semiconductor

Abstract Two-electrode solar rechargeable devices can converse and store solar energy without external bias. However, the photo-charging and dark-discharging current of these devices is low and limits their practical applications. Here, the photo-charging and dark-discharging current of Si/poly(N-methylpyrrole) (PNMPy) photoanode increases 21 and 10 times by preparing nanostructured Si semiconductor, up to 5.09 and 2.06 mA cm −2 , respectively. Further studies suggest that the improved current comes from higher separation efficiency of photo-generated carriers and new electron transfer paths on the surface of nanostructured Si. Moreover, a solar rechargeable device of Si/PNMPy/H 2 SO 4 (aq)/WO 3 /FTO was prepared, which indicated good cyclic stability. These results deepen our understanding on the current in solar rechargeable devices and offer guidance for the design of other high-performance devices.

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Publication Details

Journal
Journal of Physics D Applied Physics
Published
2024-08-22
DOI
https://doi.org/10.1088/1361-6463/ad714f
Citations
1
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.21

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article

Remarkably improved photo-charging and dark-discharging current in a faradaic junction solar rechargeable device by regulating the morphology of a semiconductor

Ziyi Wan, Zhigang Zou, Xiao Wei Sun, Ye Fu et al.
1 citations
Journal of Physics D Applied Physics
Chalcogenide Semiconductor Thin Films
0.21
article

Remarkably improved photo-charging and dark-discharging current in a faradaic junction solar rechargeable device by regulating the morphology of a semiconductor

Ziyi Wan, Zhigang Zou, Xiao Wei Sun, Ye Fu, Dongjian Jiang, Wenjun Luo, Yuzhan Zheng, Cuixia Cui, Bo Wang, Changping Yao
article en
1 citations

Abstract

Abstract Two-electrode solar rechargeable devices can converse and store solar energy without external bias. However, the photo-charging and dark-discharging current of these devices is low and limits their practical applications. Here, the photo-charging and dark-discharging current of Si/poly(N-methylpyrrole) (PNMPy) photoanode increases 21 and 10 times by preparing nanostructured Si semiconductor, up to 5.09 and 2.06 mA cm −2 , respectively. Further studies suggest that the improved current comes from higher separation efficiency of photo-generated carriers and new electron transfer paths on the surface of nanostructured Si. Moreover, a solar rechargeable device of Si/PNMPy/H 2 SO 4 (aq)/WO 3 /FTO was prepared, which indicated good cyclic stability. These results deepen our understanding on the current in solar rechargeable devices and offer guidance for the design of other high-performance devices.

Journal of Physics D Applied PhysicsVol. 57(48)
Collaborative Innovation Center of Advanced Microstructures (CN), Nanjing University (CN)
National Natural Science Foundation of China, China Postdoctoral Science Foundation
Affordable and clean energy
Openalex Percentile: Top 49%
Chalcogenide Semiconductor Thin Films
0.21
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