Tailoring Ge membrane adhesion strength: Impact of growth parameters and porous layer thickness

The recent exploration of porous Germanium (PGe) techniques marks a significant advancement in the scalable production of detachable Ge membranes and devices. However, there is a notable gap in the comprehensive understanding of the critical factors necessary to control the adhesion strength of these nanomembranes. This study delves into the effects of Ge growth temperature, in-situ annealing processes, and the thickness of the PGe layer on the reorganization of the porous interlayer, subsequently influencing the properties of the separation layer. We particularly focus on how adjusting these parameters can fine-tune the adhesion strength of the epitaxial layer, ranging from a freestanding state to a fully bonded nanomembrane. A key finding is that the thermal budget experienced by the porous structure during the buffer layer's growth significantly affects the nanomembrane's adhesion characteristics; it is imperative to minimize this duration, especially at higher growth temperatures. Our research demonstrates that by precisely controlling the voids within the PGe layer, the adhesion strength can be effectively modulated through variations in the PGe layer's thickness. The outcomes of this study offer crucial insights into the controllable adhesion strength of Ge nanomembranes, paving the way for the targeted development of detachable devices. • Tuning of the Ge membrane adhesion strength by adjusting growth and porous parameters. • Creation of a detachable Germanium membrane using a porous substrate. • Controlling the morphological reorganization of the Ge porous structure.