Efficiency boosting of 236 nm AlGaN-based micro-LEDs

Abstract In this study, 236 nm AlGaN-based deep ultraviolet (DUV) micro-LEDs with different sized P-contact areas are designed and fabricated, and the sidewalls are restored by a wet chemical treatment method with KOH solution. The results reveal that proper KOH treatment can effectively remove plasma damaged materials and clearly show the formation of m -plane facets. Compared with untreated micro-LEDs, the reverse leakage current of the treated micro-LEDs under −10 V decreases by up to 91.7% and the specific contact resistivity (SCR) reduces from 6.94 Ω cm 2 to 0.07 Ω cm 2 . The underlying mechanism is that the KOH treatment removes the sidewall defects which lead to surface nonradiative recombination sites and surface leakage. Moreover, KOH treatment also removes contamination on the P + -GaN surface and leads to lower SCR. However, a much longer treatment also destructs the 20 nm P + -GaN layer, which results in higher voltage but less DUV light absorption. As a result, the peak light output power density increases from 2.12 W cm −2 to 4.01 W cm −2 , representing an 89.2% increase. Efficient enhancement of micro-LEDs is anticipated to facilitate the development of DUV micro-LEDs for maskless lithography and high-capacity DUV non-line-of-sight communication.

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Publication Details

Journal
Journal of Physics D Applied Physics
Published
2024-08-22
DOI
https://doi.org/10.1088/1361-6463/ad714b
Citations
2
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.62

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article

Efficiency boosting of 236 nm AlGaN-based micro-LEDs

Hongbo Li, Zhiming Shi, Jialong Hao, Dabing Li et al.
2 citations
Journal of Physics D Applied Physics
GaN-based semiconductor devices and materials
0.62
article

Efficiency boosting of 236 nm AlGaN-based micro-LEDs

Hongbo Li, Zhiming Shi, Jialong Hao, Dabing Li, Wenchao Sun, Hang Zang, Shunpeng Lü, Xiaojuan Sun, Yang Chen, Jiangxiao Bai, Yuping Jia, Mingrui Liu, Ke Jiang, Tong Wu, Jianwei Ben, Licai Zhu, Shanli Zhang
article en
2 citations

Abstract

Abstract In this study, 236 nm AlGaN-based deep ultraviolet (DUV) micro-LEDs with different sized P-contact areas are designed and fabricated, and the sidewalls are restored by a wet chemical treatment method with KOH solution. The results reveal that proper KOH treatment can effectively remove plasma damaged materials and clearly show the formation of m -plane facets. Compared with untreated micro-LEDs, the reverse leakage current of the treated micro-LEDs under −10 V decreases by up to 91.7% and the specific contact resistivity (SCR) reduces from 6.94 Ω cm 2 to 0.07 Ω cm 2 . The underlying mechanism is that the KOH treatment removes the sidewall defects which lead to surface nonradiative recombination sites and surface leakage. Moreover, KOH treatment also removes contamination on the P + -GaN surface and leads to lower SCR. However, a much longer treatment also destructs the 20 nm P + -GaN layer, which results in higher voltage but less DUV light absorption. As a result, the peak light output power density increases from 2.12 W cm −2 to 4.01 W cm −2 , representing an 89.2% increase. Efficient enhancement of micro-LEDs is anticipated to facilitate the development of DUV micro-LEDs for maskless lithography and high-capacity DUV non-line-of-sight communication.

Journal of Physics D Applied PhysicsVol. 58(1)
Changchun Institute of Optics, Fine Mechanics and Physics (CN), University of Chinese Academy of Sciences (CN)
Natural Science Foundation of Jilin Province, National Natural Science Foundation of China, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 34%
GaN-based semiconductor devices and materials
0.62
DOISourceOpenAlex
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