Effects of driving capability on single-event transient of inverter in bulk FinFET Technology

Abstract With the continuous scaling down of the Integrated Circuits process, the issue of single-event transient in FinFET technology has become increasingly crucial. In this study, 3D models of inverters based on FinFET technology are established through TCAD simulation. By simulating the single-event transient of inverter units under various driving capabilities, the study quantitatively determines the impact of driving capability on SET pulse width. Additionally, the study delves into the underlying mechanism behind this relationship, focusing on the charge collection mechanism. The simulation findings indicate that increasing the driving capability leads to a higher recovery current and reduced SET pulse width. These results provide valuable insights for cost-effective mitigation strategies against single-event transient in advanced FinFET technology.