Comment on “Infrared dielectric function of GaAs1−xPx semiconductor alloys near the reststrahlen bands” [Appl. Phys. Lett. <b>123</b>, 172102 (2023)]

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Publication Details

Journal
Applied Physics Letters
Published
2024-08-19
DOI
https://doi.org/10.1063/5.0213520
Citations
3
Primary Topic
Advanced Semiconductor Detectors and Materials
Type
article
Field-Weighted Citation Impact
0.63

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article

Comment on “Infrared dielectric function of GaAs1−xPx semiconductor alloys near the reststrahlen bands” [Appl. Phys. Lett. 123, 172102 (2023)]

A. V. Postnikov, Toni Alhaddad, O. Pagès, A. Elmahjoubi
3 citations
Applied Physics Letters
Advanced Semiconductor Detectors and Materials
0.63
article

Comment on “Infrared dielectric function of GaAs1−xPx semiconductor alloys near the reststrahlen bands” [Appl. Phys. Lett. 123, 172102 (2023)]

A. V. Postnikov, Toni Alhaddad, O. Pagès, A. Elmahjoubi
article en
3 citations

Abstract

No abstract available for this paper.
Applied Physics LettersVol. 125(8)
Laboratoire de Chimie et Physique - Approche Multi-échelle des Milieux Complexes, Université de Lorraine (FR)
Université de Lorraine, Agence Nationale de la Recherche, Uniwersytet Mikolaja Kopernika w Toruniu
Openalex Percentile: Top 32%
Advanced Semiconductor Detectors and Materials
0.63
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Comment on “Infrared dielectric function of GaAs1−xPx semiconductor alloys near the reststrahlen bands” [Appl. Phys. Lett. <b>123</b>, 172102 (2023)] — A. V. Postnikov, Toni Alhaddad, et al. · Applied Physics Letters (2024) | TGRS Research Map | TGRS