Freezing non-radiative recombination in high-performance CsPbBr3 single crystal x-ray detector

Though CsPbBr3 single crystals (SCs) possess intriguing photoelectronic properties for x/γ-ray detection, the serious ion migration and high thermally activated carrier concentration at room temperature (RT), typically associated with defect states in CsPbBr3 crystals, result in a high dark current and drift of baseline, hindering their potential applications. In this investigation, liquid nitrogen cooling is proposed to freeze deep-level defects in CsPbBr3 SCs, thereby suppressing the ion migrations and decreasing the thermally excited carrier concentration. Utilizing photoluminescence (PL) and time-resolved PL spectra, coupled with theoretical models for photoexcitation and photoemission processes, the freezing of deep-level defects at liquid nitrogen temperature (LNT) is confirmed, which is conducive to decreasing non-radiative recombination. At LNT, the CsPbBr3 SC exhibits a higher resistivity of 4.95 × 1011 Ω cm and a higher mobility–lifetime product of 9.54 × 10−3 cm2 V−1, in contrast to the RT values of 3.86 × 109 Ω cm and 3.67 × 10−3 cm2 V−1, respectively. Furthermore, the x-ray detector at LNT exhibits a high sensitivity of 9309 μC Gyair−1 cm−2 and an impressively low detection limit of 0.054 nGy s−1, which offers a route for obtaining highly sensitive x-ray detectors for applications including ultra-low dose radiation imaging.

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Publication Details

Journal
Applied Physics Letters
Published
2024-08-19
DOI
https://doi.org/10.1063/5.0224223
Citations
12
Primary Topic
Advanced Semiconductor Detectors and Materials
Type
article
Field-Weighted Citation Impact
2.50

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article

Freezing non-radiative recombination in high-performance CsPbBr3 single crystal x-ray detector

Zanhong Deng, Gang Meng, Yanan Song, Xiao Zhao et al.
12 citations
Applied Physics Letters
Advanced Semiconductor Detectors and Materials
2.50
article

Freezing non-radiative recombination in high-performance CsPbBr3 single crystal x-ray detector

Zanhong Deng, Gang Meng, Yanan Song, Xiao Zhao, V. A. Gnatyuk, Toru Aoki, Shimao Wang, Ruhua Tao, Xiaodong Fang, Libing You
article en
12 citations

Abstract

Though CsPbBr3 single crystals (SCs) possess intriguing photoelectronic properties for x/γ-ray detection, the serious ion migration and high thermally activated carrier concentration at room temperature (RT), typically associated with defect states in CsPbBr3 crystals, result in a high dark current and drift of baseline, hindering their potential applications. In this investigation, liquid nitrogen cooling is proposed to freeze deep-level defects in CsPbBr3 SCs, thereby suppressing the ion migrations and decreasing the thermally excited carrier concentration. Utilizing photoluminescence (PL) and time-resolved PL spectra, coupled with theoretical models for photoexcitation and photoemission processes, the freezing of deep-level defects at liquid nitrogen temperature (LNT) is confirmed, which is conducive to decreasing non-radiative recombination. At LNT, the CsPbBr3 SC exhibits a higher resistivity of 4.95 × 1011 Ω cm and a higher mobility–lifetime product of 9.54 × 10−3 cm2 V−1, in contrast to the RT values of 3.86 × 109 Ω cm and 3.67 × 10−3 cm2 V−1, respectively. Furthermore, the x-ray detector at LNT exhibits a high sensitivity of 9309 μC Gyair−1 cm−2 and an impressively low detection limit of 0.054 nGy s−1, which offers a route for obtaining highly sensitive x-ray detectors for applications including ultra-low dose radiation imaging.

Applied Physics LettersVol. 125(8)
University of Science and Technology of China (CN), Shizuoka University (JP), National Academy of Sciences of Ukraine (UA), Chinese Academy of Sciences (CN), Hefei Institutes of Physical Science (CN), V.E. Lashkaryov Institute of Semiconductor Physics (UA), Anhui Institute of Optics and Fine Mechanics (CN), Shenzhen Technology University (CN)
National Natural Science Foundation of China, State Key Laboratory of Particle Detection and Electronics
Life below water
Openalex Percentile: Top 10%
Advanced Semiconductor Detectors and Materials
2.50
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