Freezing non-radiative recombination in high-performance CsPbBr3 single crystal x-ray detector
Though CsPbBr3 single crystals (SCs) possess intriguing photoelectronic properties for x/γ-ray detection, the serious ion migration and high thermally activated carrier concentration at room temperature (RT), typically associated with defect states in CsPbBr3 crystals, result in a high dark current and drift of baseline, hindering their potential applications. In this investigation, liquid nitrogen cooling is proposed to freeze deep-level defects in CsPbBr3 SCs, thereby suppressing the ion migrations and decreasing the thermally excited carrier concentration. Utilizing photoluminescence (PL) and time-resolved PL spectra, coupled with theoretical models for photoexcitation and photoemission processes, the freezing of deep-level defects at liquid nitrogen temperature (LNT) is confirmed, which is conducive to decreasing non-radiative recombination. At LNT, the CsPbBr3 SC exhibits a higher resistivity of 4.95 × 1011 Ω cm and a higher mobility–lifetime product of 9.54 × 10−3 cm2 V−1, in contrast to the RT values of 3.86 × 109 Ω cm and 3.67 × 10−3 cm2 V−1, respectively. Furthermore, the x-ray detector at LNT exhibits a high sensitivity of 9309 μC Gyair−1 cm−2 and an impressively low detection limit of 0.054 nGy s−1, which offers a route for obtaining highly sensitive x-ray detectors for applications including ultra-low dose radiation imaging.
Authors
- Zanhong Deng (ORCID: https://orcid.org/0000-0003-3487-9167)
- Gang Meng (ORCID: https://orcid.org/0000-0002-3365-8963)
- Yanan Song (ORCID: https://orcid.org/0000-0002-5844-2712)
- Xiao Zhao (ORCID: https://orcid.org/0000-0002-7357-2697)
- V. A. Gnatyuk (ORCID: https://orcid.org/0000-0001-6412-2064)
- Toru Aoki (ORCID: https://orcid.org/0000-0002-6107-3962)
- Shimao Wang (ORCID: https://orcid.org/0000-0002-4495-6130)
- Ruhua Tao (ORCID: https://orcid.org/0000-0002-8053-4330)
- Xiaodong Fang (ORCID: https://orcid.org/0000-0002-5547-126X)
- Libing You (ORCID: https://orcid.org/0000-0002-6106-2921)
Institutions
- University of Science and Technology of China (CN)
- Shizuoka University (JP)
- National Academy of Sciences of Ukraine (UA)
- Chinese Academy of Sciences (CN)
- Hefei Institutes of Physical Science (CN)
- V.E. Lashkaryov Institute of Semiconductor Physics (UA)
- Anhui Institute of Optics and Fine Mechanics (CN)
- Shenzhen Technology University (CN)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2024-08-19
- DOI
- https://doi.org/10.1063/5.0224223
- Citations
- 12
- Primary Topic
- Advanced Semiconductor Detectors and Materials
- Type
- article
- Field-Weighted Citation Impact
- 2.50
Funders
- National Natural Science Foundation of China
- State Key Laboratory of Particle Detection and Electronics