Observation of Moment-Dependent and Field-Driven Unidirectional Magnetoresistance in CoFeB/InSb/CdTe Heterostructures

Magnetoresistance effects are crucial for understanding the charge-spin transport as well as propelling the advancement of spintronic applications. Here, we report the coexistence of magnetic-moment-dependent (MD) and magnetic-field-driven (FD) unidirectional magnetoresistance (UMR) effects in CoFeB/InSb/CdTe heterostructures. The strong spin-orbital coupling of InSb and the matched impedance at the CoFeB/InSb interface warrant a distinct MD-UMR effect at room temperature, while the interaction between the in-plane magnetic field and the Rashba effect at the InSb/CdTe interface induces the marked FD-UMR signal that dominates the high-field region. Moreover, owning to different spin scattering mechanisms, these two types of non-reciprocal charge transports show opposite polarities with respect to the magnetic field direction, which further enables an effective phase modulation of the angular-dependent magnetoresistance. The demonstration of the tunable UMR response validates our CoFeB/InSb/CdTe system as a suitable integrated building block for multifunctional spintronic memory and sensor designs.

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Publication Details

Journal
ACS Applied Materials & Interfaces
Published
2024-08-20
DOI
https://doi.org/10.1021/acsami.4c08159
Citations
2
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
0.68

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article

Observation of Moment-Dependent and Field-Driven Unidirectional Magnetoresistance in CoFeB/InSb/CdTe Heterostructures

Bin Rong, Xufeng Kou, Jiuming Liu, Hanzhi Ruan et al.
2 citations
ACS Applied Materials & Interfaces
Magnetic properties of thin films
0.68
article

Observation of Moment-Dependent and Field-Driven Unidirectional Magnetoresistance in CoFeB/InSb/CdTe Heterostructures

Bin Rong, Xufeng Kou, Jiuming Liu, Hanzhi Ruan, Yumeng Yang, Lu Sun, Liyang Liao, Puyang Huang, Renchao Che, Xinyu Cai, Zhenghang Zhi, Guoqiang Yu, Shan Yao, Xinqi Liu, Liang Yu, Qi Yao, Chenjia Tang, Yuyang Wu
article en
2 citations

Abstract

Magnetoresistance effects are crucial for understanding the charge-spin transport as well as propelling the advancement of spintronic applications. Here, we report the coexistence of magnetic-moment-dependent (MD) and magnetic-field-driven (FD) unidirectional magnetoresistance (UMR) effects in CoFeB/InSb/CdTe heterostructures. The strong spin-orbital coupling of InSb and the matched impedance at the CoFeB/InSb interface warrant a distinct MD-UMR effect at room temperature, while the interaction between the in-plane magnetic field and the Rashba effect at the InSb/CdTe interface induces the marked FD-UMR signal that dominates the high-field region. Moreover, owning to different spin scattering mechanisms, these two types of non-reciprocal charge transports show opposite polarities with respect to the magnetic field direction, which further enables an effective phase modulation of the angular-dependent magnetoresistance. The demonstration of the tunable UMR response validates our CoFeB/InSb/CdTe system as a suitable integrated building block for multifunctional spintronic memory and sensor designs.

ACS Applied Materials & InterfacesVol. 16(34)
Chinese Academy of Sciences (CN), Fudan University (CN), ShanghaiTech University (CN), Shanghai Institute of Microsystem and Information Technology (CN), Shanghai Research Institute of Materials (CN), Collaborative Innovation Center of Chemistry for Energy Materials (CN), Institute of Physics (CN), University of Chinese Academy of Sciences (CN), The University of Tokyo (JP)
National Natural Science Foundation of China, Science and Technology Commission of Shanghai Municipality, ShanghaiTech University, National Key Research and Development Program of China
Openalex Percentile: Top 32%
Magnetic properties of thin films
0.68
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