Near zero-field magnetoresistance and defects in gallium nitride pn junctions
As gallium nitride (GaN) grows in importance, an atomic scale understanding of device performance is of significant relevance. In this paper, we present the first observations of near zero-field magnetoresistance (NZFMR) detecting electrically active defects in GaN-based devices. Our observations involve recombination current in GaN pn junction diodes. We attribute the NZFMR response to gallium vacancies.
Authors
- Patrick M. Lenahan (ORCID: https://orcid.org/0000-0002-8937-9904)
- David A. Fehr (ORCID: https://orcid.org/0009-0002-9103-0178)
- Michael E. Flatté (ORCID: https://orcid.org/0000-0001-5093-1549)
- M. J. Elko
- D. Larsen (ORCID: https://orcid.org/0000-0002-9898-2174)
- Michael D. Craven (ORCID: https://orcid.org/0000-0003-1334-3478)
- Dustin T. Hassenmayer
- Aidan Higgins
Institutions
- University of Iowa (US)
- Pennsylvania State University (US)
- Redox Power Systems (United States) (US)
Publication Details
- Journal
- Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
- Published
- 2024-08-20
- DOI
- https://doi.org/10.1116/6.0003855
- Citations
- 1
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.21
Funders
- Air Force Office of Scientific Research