Study on the damage characteristics of single-crystal silicon ablated by 355 nm UV picosecond laser

Abstract The experimental investigation on picosecond laser ablation of single-crystal silicon is presented in this paper. An ultraviolet (UV) picosecond laser with a wavelength of 355 nm and a pulse width of 10 ps was employed to create single-pulse ablation craters on the surface of single-crystal silicon. The influence of laser power variation on the morphology of single-pulse ablation was analyzed. The diameter of the ablation craters was measured and statistically analyzed. Based on the results, the picosecond laser spot diameter was calculated to be 7.65 μm, and the ablation threshold of single-crystal silicon in this experiment was determined to be 0.212 J/cm 2 .