Effects of athermal carrier injection on Co-60 gamma-ray damage in SiC merged-PiN Schottky diodes
Co-60 gamma irradiation of SiC merged-PiN Schottky (MPS) diodes up to fluences of 1 Mrad (Si) produces increases in both forward and reverse current, with less damage when the devices are biased during irradiation. Subsequent injection of minority carriers by forward biasing at 300 K can partially produce some damage recovery, but at high forward biases also can lead to further degradation of the devices, even in the absence of radiation damage. Recombination-enhanced annealing by carrier injection overall is not an effective technique for recovering gamma-induced damage in SiC MPS diodes, especially when compared to other near athermal methods like electron wind force annealing.
Authors
- Douglas E. Wolfe (ORCID: https://orcid.org/0009-0004-5090-0290)
- Aman Haque (ORCID: https://orcid.org/0000-0001-6535-5484)
- Jian-Sian Li (ORCID: https://orcid.org/0000-0002-2817-7612)
- Chao-Ching Chiang (ORCID: https://orcid.org/0000-0002-0447-8170)
- Sergei P. Stepanoff (ORCID: https://orcid.org/0000-0002-5727-4358)
- Hsiao-Hsuan Wan (ORCID: https://orcid.org/0000-0002-6986-8217)
- S. J. Pearton (ORCID: https://orcid.org/0000-0001-6498-1256)
- F. Ren (ORCID: https://orcid.org/0000-0001-9234-019X)
Institutions
- Pennsylvania State University (US)
- University of Florida (US)
Publication Details
- Journal
- Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
- Published
- 2024-08-19
- DOI
- https://doi.org/10.1116/6.0003819
- Citations
- 1
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.21
Funders
- Defense Threat Reduction Agency