Ultra-low density and high performance InAs quantum dot single photon emitters
We report the development of high quality InAs quantum dots with an ultra-low density of 2 × 107 cm−2 on (001) GaAs substrates. A significant reduction in the emission wavelength inhomogeneity has been observed. A representative dot has been characterized under cryogenic temperatures, demonstrating a close-to-ideal antibunching of both the exciton and biexciton emissions with a fitted g(2)(0) = 0.008 and 0.059, respectively.
Authors
- Chen Shang (ORCID: https://orcid.org/0000-0002-2577-9220)
- Moritz Meinecke
- Quirin Buchinger (ORCID: https://orcid.org/0000-0002-2114-2628)
- Andreas Pfenning (ORCID: https://orcid.org/0000-0002-7390-5041)
- Marco De Gregorio (ORCID: https://orcid.org/0000-0002-6051-9555)
- John E. Bowers (ORCID: https://orcid.org/0000-0003-4270-8296)
- Peter Gschwandtner (ORCID: https://orcid.org/0009-0007-1777-9187)
- Sven Höfling (ORCID: https://orcid.org/0000-0003-0034-4682)
- Tobias Huber (ORCID: https://orcid.org/0000-0002-5788-8501)
Institutions
- University of California, Santa Barbara (US)
- University of Würzburg (DE)
Publication Details
- Journal
- APL Quantum
- Published
- 2024-08-19
- DOI
- https://doi.org/10.1063/5.0209866
- Citations
- 9
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 3.04
Funders
- National Science Foundation
- Bundesministerium für Bildung und Forschung