First-principles calculations of cubic boron arsenide surfaces

The properties of cubic boron arsenide (c-BAs) (100), (110), and (111) surfaces are investigated by performing first-principles calculations using the slab and Green's function surface models with different terminals. The (111) surface with As-termination is found to be the most stable structure among the studied surfaces, with its lowest surface energy (1.70–1.92 J m−2) and largest surface density (20.24 nm−2). The electronic affinity of these surfaces lie in the range 4.62–6.17 eV, which is higher than that of common semiconductor materials, such as silicon (4.05 eV) and germanium (4.13 eV), implying that the electrons at the bottom of the conduction band require more energy to escape. The surface states of the structures with As-termination in the surface band structures are generally more numerous and extended than those with B-termination. The absorption peak of the bulk c-BAs is located in the ultraviolet region, and the light absorption ranges of the surfaces are significantly extended compared with the bulk c-BAs, due to the surface states inside the bandgap.

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Publication Details

Journal
Applied Physics Letters
Published
2024-08-19
DOI
https://doi.org/10.1063/5.0214687
Citations
3
Primary Topic
Graphene research and applications
Type
article
Field-Weighted Citation Impact
0.35
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First-principles calculations of cubic boron arsenide surfaces

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Applied Physics Letters
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article

First-principles calculations of cubic boron arsenide surfaces

Yuxuan Sun, Lingxue Zhang, Ruge Quhe, Jiaxin Zhang, Yinge Niu
article en
3 citations

Abstract

The properties of cubic boron arsenide (c-BAs) (100), (110), and (111) surfaces are investigated by performing first-principles calculations using the slab and Green's function surface models with different terminals. The (111) surface with As-termination is found to be the most stable structure among the studied surfaces, with its lowest surface energy (1.70–1.92 J m−2) and largest surface density (20.24 nm−2). The electronic affinity of these surfaces lie in the range 4.62–6.17 eV, which is higher than that of common semiconductor materials, such as silicon (4.05 eV) and germanium (4.13 eV), implying that the electrons at the bottom of the conduction band require more energy to escape. The surface states of the structures with As-termination in the surface band structures are generally more numerous and extended than those with B-termination. The absorption peak of the bulk c-BAs is located in the ultraviolet region, and the light absorption ranges of the surfaces are significantly extended compared with the bulk c-BAs, due to the surface states inside the bandgap.

Applied Physics LettersVol. 125(8)
Beijing University of Posts and Telecommunications (CN)
Affordable and clean energy
Openalex Percentile: Top 45%
Graphene research and applications
0.35
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