Thermal Stability Analysis of SiC MOSFET Power Modules

SiC MOSFETs, as high-performance power devices with high breakdown field strength and high operating temperature, hold broad prospects in the field of power electronics. Addressing the heat dissipation issue of a specific controller, this study investigates the steady-state temperature under the condition where the thermal power consumption of a single SiC MOSFET is 200W. By simplifying the model of a single SiC MOSFET in COMSOL Multiphysics software, the complexity of simulation boundary conditions and mesh division is reduced. The finite element method (FEM) is used to obtain a relatively accurate steady-state temperature. With the establishment of appropriate cooling methods, the requirement for a steady-state temperature of 100°C is satisfied. The results of simulation also indicate that larger chip distances, solder materials with better thermal properties and thinner thickness, as well as increased substrate thickness, can effectively suppress the steady-state temperature.