Mechanism and Barrier Modulation of Pt/TaO<i>ₓ</i>/HfO₂/TiN Self- Rectifying Devices

In order to solve the crosstalk issue in a high-density memristor integrated array, the sneak path current in crossbar array should be effectively reduced. The self-rectifying memristor (SRM) becomes the best choice because of suppressing leakage current while exhibiting resistive characteristics without the need for external equipment, in which can improve array integration at a lower cost. In this article, an SRM with Pt/TaO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>x</i></sub>/HfO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>/TiN structure is proposed. By modulating the thickness of the HfO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> rectifying layer, the rectifying ratio of device can achieve as 3743 under ±3 V with a sneak current below 10 nA and compliance current under <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10 \; \mu $ </tex-math></inline-formula>A. The self-rectification mechanism based on Schottky barrier modulation and oxygen vacancy defect traps is demonstrated by fitting analysis and interfacial barrier energy bands model. The maximum array size can reach 12 570 at the premise of 10% read margin with the device parameters. Our results provide a potential solution for the future application of memristor in the field of high-density memory integration.