Influence of the selection of the approximating function of thermometric characteristics on the measurement results of thermal resistance of power mosfets

The paper describes the results of investigations illustrating the influence of the method of determining the excess of junction temperature and the selection of a function approximating the thermometric characteristic used in the procedure of measuring thermal resistance of a power MOS transistor on the measurement results. The investigations involved the measurements made using an indirect electrical method. Three methods of determining the excess of junction temperature of the transistor are presented, using a linear function and nonlinear function approximating thermometric characteristics. The thermal resistance measurement results obtained using each of the considered methods were compared. The measurement error caused by the selection of the considered methods was also analyzed.

Authors

Institutions

Publication Details

Journal
Metrology and Measurement Systems
Published
2024-08-19
DOI
https://doi.org/10.24425/mms.2024.149702
Citations
3
Primary Topic
Thermography and Photoacoustic Techniques
Type
article
Field-Weighted Citation Impact
0.81
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Influence of the selection of the approximating function of thermometric characteristics on the measurement results of thermal resistance of power mosfets

Krzysztof Posobkiewicz, Krzysztof Górecki
3 citations
Metrology and Measurement Systems
Thermography and Photoacoustic Techniques
0.81
article

Influence of the selection of the approximating function of thermometric characteristics on the measurement results of thermal resistance of power mosfets

Krzysztof Posobkiewicz, Krzysztof Górecki
article en
3 citations

Abstract

The paper describes the results of investigations illustrating the influence of the method of determining the excess of junction temperature and the selection of a function approximating the thermometric characteristic used in the procedure of measuring thermal resistance of a power MOS transistor on the measurement results. The investigations involved the measurements made using an indirect electrical method. Three methods of determining the excess of junction temperature of the transistor are presented, using a linear function and nonlinear function approximating thermometric characteristics. The thermal resistance measurement results obtained using each of the considered methods were compared. The measurement error caused by the selection of the considered methods was also analyzed.

Metrology and Measurement Systems
Gdynia Maritime University (PL)
Affordable and clean energy
Openalex Percentile: Top 33%
Thermography and Photoacoustic Techniques
0.81
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.