Influence of annealing on Si-Ge thin films with high concentration of tellurium and zinc

The elements are distinguished via the basis of energy band gap. Two configurations Si10Ge10Te80 and Si10Ge10Zn80 multilayers were annealed under vacuum at eutectic temperature of 400 °C to form alloys between the deposited layers. The two samples were studied at different temperatures to improve the physical properties of the thin films. Kinetics of the two configurations Si10Ge10Te80 and Si10Ge10Zn80 were studied in the temperature range 308- 673 oK. The results revealed that the crystallization of the thin film of multilayer for the samples increases with increasing the annealing temperature and increasing the zinc content. The influence of annealing on the structure and stability of the samples has been studied by X- ray diffraction. The optical and electrical measurements were carried out after annealing. The electrical conductivity of the two samples was measured as a function of temperature and annealing time. It was found that the electrical conductivity for Si10Ge10Zn80 increases, and the optical gap decrease due to the crystallization effects that occurs only in Ge matrix and with increasing zinc content at high concentration.