Tailoring Subthreshold Swing in A‐IGZO Thin‐Film Transistors for Amoled Displays: Impact of Conversion Mechanism on Peald Deposition Sequences (Small Methods 8/2024)
Inside Front Cover In article number 2301185, Shong, Jeong, and co-workers explore controlling the gate swing in amorphous IGZO thin-film transistors using a plasma-enhanced atomic layer deposition. The conversion mechanism in the deposition sequence of In-Zn-Ga allows the controllable gate swing value. The observed behavior is attributed to different surface reactivity. It can be applied into organic light-emitting diode tablets and notebooks.
Authors
- Jae Kyeong Jeong (ORCID: https://orcid.org/0000-0003-3857-1039)
- Jaehun Cho (ORCID: https://orcid.org/0000-0001-8096-7454)
- Jae Seok Hur
- Iaan Cho
- Jong Uk Bae
- Seong Hun Yoon (ORCID: https://orcid.org/0009-0000-7269-840X)
- Bonggeun Shong (ORCID: https://orcid.org/0000-0002-5782-6300)
- Jiyoung Kim (ORCID: https://orcid.org/0000-0003-2781-5149)
- Min Jae Kim
- Heung Jo Lee
- Seon Woong Bang
Institutions
- The University of Texas at Dallas (US)
- Hanyang University (KR)
- Hongik University (KR)
Publication Details
- Journal
- Small Methods
- Published
- 2024-08-01
- DOI
- https://doi.org/10.1002/smtd.202470043
- Citations
- 2
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.42