Bipolar resistive switching in MAPbI3−xClx mixed halide perovskite with polyvinylpyrrolidone additives

In our study, we successfully demonstrated bipolar resistive switching in Resistive Random-Access Memory (RRAM) devices using MAPbI[Formula: see text][Formula: see text]Cl[Formula: see text] mixed halide perovskite, thereby underscoring the immense potential of this material for future memory applications. By incorporating polyvinylpyrrolidone (PVP) into the device structure, which consists of MAPbI[Formula: see text][Formula: see text]Cl[Formula: see text] sandwiched between top (Au) and bottom (ITO) electrodes, we achieved a remarkable morphological transition from elongated, needle-like structures to denser, more compact forms. This morphological evolution was pivotal in significantly lowering operational voltages, with “SET” and “RESET” voltages dramatically reduced from 7 V to 0.7 V and −2.2 V to −0.2 V, respectively. The incorporation of PVP proved to be a key factor in this achievement, as it enhanced charge transport within the device, minimized energy barriers, and markedly improved the dielectric properties of the perovskite material. These enhancements contributed directly to the observed reduction in switching voltages, marking a substantial leap forward in the quest for more efficient, stable, and low-power RRAM devices. Our research not only advances the field of memory technology but also emphasizes the critical aspects of reduced power consumption and the potential for enhanced device stability. This significant decrease in energy requirements, coupled with the prospect of increased device longevity, underscores the transformative impact of our findings, paving the way for the development of sustainable and reliable memory technologies that are well-suited to meet the demands of future electronic devices and systems.